Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Tai Cheng-chi

  Department Of Electrical Engineering National Cheng Kung University

関連論文

• Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
• Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

スポンサーリンク