Threshold voltage shifts and their variability behaviors in p-channel FETs by high voltage on-state and off-state stress

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概要

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• This paper presents threshold voltage shifts (Δ|V<inf>th</inf>|) and their variability in p-channel metal–oxide–semiconductor field effect transistors (pMOSFETs) by the high voltage ON- and OFF-state stress. Measurement data show that Δ|V<inf>th</inf>| in pFETs by the high voltage ON- and OFF-state stress depends on gate length and gate width. Larger positive Δ|V<inf>th</inf>| by the ON-state stress is obtained in shorter gate length and narrower gate width pFETs and the negative Δ|V<inf>th</inf>| by the OFF-state stress is observed only in the narrowest pFETs. It is also found that variability of Δ|V<inf>th</inf>| by the ON-state stress shows normal distribution and roughly follows the Pelgrom plot, indicating that the total trapped charges by the ON-state stress are randomly placed. These measurement data provide clear device design guidelines for the post-fabrication self-improvement scheme of static random access memory (SRAM) cell stability.

• Institute of Physicsの論文
• 2014-07-03

著者

• ALIAS Nurul

  Institute Industrial Science, The University of Tokyo

関連論文

• NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
• Threshold voltage shifts and their variability behaviors in p-channel FETs by high voltage on-state and off-state stress

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