Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain

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概要

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• In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers (VCSELs) a dielectric aperture is generally used in combination with an indium--tin-oxide (ITO) layer on the top intracavity p-contact layer. The most straightforward way to realize this introduces a depression of the structure near the optical axis and we show, by using a two-dimensional (2D) effective index method and a three-dimensional (3D) coupled-cavity beam propagation method, that this typically results in optically anti-guided structures with associated high optical losses and thus very high threshold gains. Remarkably, the threshold gain reduces with increased negative guiding, which is due to improved lateral confinement and reduction of lateral leakage. Still, moderately positively guided designs should be preferred to avoid the detrimental effect of lateral leakage and high diffraction loss. To ensure positive index guiding, we propose to planarize the structure or introduce an elevation near the optical axis by additional processing, with an associated reduction in threshold material gain from 6000 to 2000 cm^-1for the studied structures.

• 2013-08-25

著者

• Gustavsson Johan

  Photonics Laboratory Department Of Microtechnology And Nanoscience Chalmers University Of Technology

• Haglund Asa

  Photonics Laboratory Department Of Microtechnology And Nanoscience Chalmers University Of Technology

• Grandjean Nicolas

  Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

• Hashemi Ehsan

  Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

• Cosendey Gatien

  Laboratory of Advanced Semiconductors for Photonics and Electronics, Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne CH-1015, Switzerland

• Bengtsson Jörgen

  Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

• Stattin Martin

  Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

• Bengtsson Jörgen

  Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

関連論文

• High Frequency VCSEL Dynamics and Microwave Applications
• [Invited Paper]High Frequency VCSEL Dynamics and Microwave Applications
• In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on $m$- and $r$-plane Sapphire Substrates
• $M$-Plane GaN Grown on $m$-Plane Sapphire by Hydride Vapor Phase Epitaxy
• ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers
• Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain
• ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers

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