In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on $m$- and $r$-plane Sapphire Substrates
スポンサーリンク
概要
- 論文の詳細を見る
The in-plane polarities of GaN and ZnO non-polar films deposited on $r$- and $m$-sapphire are compared. The polarity is unique on $r$-sapphire and mixed on $m$-sapphire because the direction on the substrate surface parallel to the wurztite $c$-direction is polar in the first case and non-polar in the second case. Furthermore, on $r$-sapphire where GaN and ZnO have a unique polarity, the directions of the polar $c$-axis relative to a reference sense in the substrate surface are opposite for both materials. This difference may be related to the nitridation which is the first step of the of III–nitride growth.
- 2009-09-25
著者
-
Bougrioua Zahia
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
-
Vennegues Philippe
Centre de Recherche sur l'Heteroepitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
-
Zuniga-Perez Jesus
Centre de Recherche sur l'Heteroepitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
-
Grandjean Nicolas
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
-
Martin Denis
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
-
Zhu Tiankai
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
-
Bougrioua Zahia
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
-
Zhu Tiankai
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
関連論文
- Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on ($11\bar{2}0$) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy
- In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on $m$- and $r$-plane Sapphire Substrates
- $M$-Plane GaN Grown on $m$-Plane Sapphire by Hydride Vapor Phase Epitaxy
- Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on $M$-Plane Sapphire by Metalorganic Vapor Phase Epitaxy
- Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain