$M$-Plane GaN Grown on $m$-Plane Sapphire by Hydride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
$M$-plane GaN epilayers have been directly grown on $m$-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The $m$-plane GaN surface is optically smooth and mirror-like, with rms roughness ${\sim}2.0$ nm ($5\times 5$ μm2) measured by atomic force microscopy. We have found that the sapphire surface treatments prior to the growth determine the crystal orientations of the GaN epilayers. In particular, in situ thermal cleaning in H2 ambient, followed by NH3 nitridation at low temperature, reproducibly results in single $m$-plane GaN orientation, while other surface preparations lead to semi-polar GaN ($10\bar{1}\bar{3}$) plane.
- 2009-02-25
著者
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Grandjean Nicolas
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Martin Denis
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Martin Denis
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institute of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Zhu Tiankai
Laboratory of Advanced Semiconductors for Photonics and Electronics, Institut of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
関連論文
- In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on $m$- and $r$-plane Sapphire Substrates
- $M$-Plane GaN Grown on $m$-Plane Sapphire by Hydride Vapor Phase Epitaxy
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