Plasma-Deposited SiO

概要

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A plasma-deposited SiO<inf>x</inf>C<inf>y</inf>H<inf>z</inf>barrier coating was investigated for the encapsulation of an organic photovoltaic (OPV). A closed drift linear plasma source, which is a modified extended layer linear ion source, was used to deposit SiO<inf>x</inf>C<inf>y</inf>H<inf>z</inf>films without any plasma damage due to plasma heating and ion bombardment on the organic devices. The deposition precursor was a gas mixture of hexamethyldisiloxane (HMDSO) and oxygen. The effect of the \text{HMDSO}/(\text{HMDSO}+\text{O_{2}}) ratio over the range from 3.7 to 14.2% on the silicon content in Si(--O)<inf>x</inf>bonding was studied. HMDSO reacted effectively with oxygen radicals to form pure SiO<inf>2</inf>bonds at the ratio of 3.7%. However, additional HMDSO injection led to insufficient HMDSO oxidation resulting in SiO<inf>x</inf>C<inf>y</inf>H<inf>z</inf>film deposition. In this work, a SiO<inf>2</inf>single layer deposited at the ratio of 3.7% was adapted for the encapsulation of OPV. The encapsulated OPV showed an original power conversion efficiency (PCE) of {\sim}2% without any degradation.
2013-07-25