Hydrogenated Amorphous Carbon Films Prepared by Filtered Vacuum Arc Method with Various C2H2 Pressures

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Hydrogenated amorphous carbon films (a-C:H) were deposited on silicon (100) substrates using a filtered vacuum arc (FVA) method. A graphite cathode and acetylene (C2H2) at various flow rates were used to synthesize the carbon films. The deposition rate of the carbon films without C2H2 addition was 5 nm/min, whereas the deposition rate increased from 23 to 82 nm/min with increasing C2H2 flow rate from 2.5 to 20 sccm. The supply of C2H2 gas induces an increase in CH radical density near the substrate, resulting in a high deposition rate. The plasma diagnostics using optical emission spectroscopy showed that the emission peak intensity of the CH radicals (A 3--X 3, 431.26 nm) increased with increasing C2H2 flow rate. Raman spectroscopy revealed a change in the deposited films from nano-crystalline graphite to a-C:H as the C2H2 flow rate was increased.
2011-01-25