Improvement of Photovoltaic Characteristics by MoO

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概要

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• Thick heterojunction cells composed of fullerene and p-type hole-transporting materials (HTMs) doped with molybdenum oxide (MoO<inf>3</inf>) were fabricated. The Fermi level (E_{\text{F}}) of HTMs shifted toward the positive direction and close to the upper edge of the valence band following MoO<inf>3</inf>doping. These E_{\text{F}} shifts indicate that intrinsic HTMs changed to be of the p-type. The introduction of p-type HTMs to the cells increased photocurrent density and fill factor. The increase in photocurrent density can be explained by the formation of built-in potential at the interface between p-type HTMs and C<inf>60</inf>. On the other hand, the increase in fill factor can be explained by the drastic decrease in the resistance of 300-nm-thick HTM films, which reached a very small value of 2 \Omega.

• 2013-04-25

著者

• HIRAMOTO Masahiro

  Institute for Molecular Science

• Shinmura Yusuke

  Institute for Molecular Science, Okazaki, Aichi 444-8787, Japan

• KAJI Toshihiko

  Institute for Molecular Science

• Kaji Toshihiko

  Institute for Molecular Science, Okazaki, Aichi 444-8787, Japan

• SHINMURA Yusuke

  Institute for Molecular Science

• KUBO Masayuki

  Institute for Molecular Science

関連論文

• One Month Continuous Operation of Organic p-i-n Solar Cells Covered with a Zinc Oxide Protection Layer
• Invertible Organic Photovoltaic Cells with Heavily Doped Organic/Metal Ohmic Contacts
• Tuning of Barrier Parameters of n-Type Schottky Junctions in Photovoltaic Co-Deposited Films by Doping
• Invertible Organic Photovoltaic Cells with Heavily Doped Organic/Metal Ohmic Contacts
• Improvement of Photovoltaic Characteristics by MoO
• Tuning of Barrier Parameters of n-Type Schottky Junctions in Photovoltaic Co-Deposited Films by Doping
• Structures of Naphthol–AOT Self-Assembly Organogels and Their Applications to Dispersing Media of Rare-Earth Complexes

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