Tuning of Barrier Parameters of n-Type Schottky Junctions in Photovoltaic Co-Deposited Films by Doping

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概要

• 論文の詳細を見る
• 2013-01-25

著者

• HIRAMOTO Masahiro

  Institute for Molecular Science

• ISHIYAMA Norihiro

  Institute for Molecular Science

• KAJI Toshihiko

  Institute for Molecular Science

• Yoshioka Tadashi

  Institute for Molecular Science, Okazaki, Aichi 444-8787, Japan

関連論文

• One Month Continuous Operation of Organic p-i-n Solar Cells Covered with a Zinc Oxide Protection Layer
• Invertible Organic Photovoltaic Cells with Heavily Doped Organic/Metal Ohmic Contacts
• Tuning of Barrier Parameters of n-Type Schottky Junctions in Photovoltaic Co-Deposited Films by Doping
• Invertible Organic Photovoltaic Cells with Heavily Doped Organic/Metal Ohmic Contacts
• Improvement of Photovoltaic Characteristics by MoO
• Tuning of Barrier Parameters of n-Type Schottky Junctions in Photovoltaic Co-Deposited Films by Doping
• Structures of Naphthol–AOT Self-Assembly Organogels and Their Applications to Dispersing Media of Rare-Earth Complexes

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