Conductivity Degradation of 4H-SiC p--i--n Diode with In-Grown Stacking Faults

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概要

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• The electrical characteristics of 4H-SiC p--i--n diodes with 8H-type in-grown stacking faults are investigated. The 4H-SiC p--i--n diodes have epilayers with a low Z<inf>1/2</inf>center density formed by carbon implantation. The forward voltage drops of the 4H-SiC p--i--n diode with 8H-type in-grown stacking faults are larger than those of the 4H-SiC p--i--n diode without an 8H-type in-grown stacking fault. The differential on-resistance of the 4H-SiC p--i--n diode with 8H-type in-grown stacking faults is larger than the drift resistance of the drift layer calculated from the doping density and thickness of the drift layer. A large number of electrons are trapped at 8H-type in-grown stacking faults, and the effective carrier density decreases compared with the doping density.

• 2013-04-25

著者

• Tsuchida Hidekazu

  Materials Science Research Laboratory Central Research Institute Of Electric Power Industry (criepi)

• Nakayama Koji

  Power Engineering R&D Center, Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan

• Asano Katsunori

  Power Engineering R&D Center, The Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan

• Tanaka Atsushi

  Power Engineering R&D Center, The Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan

• Miyazawa Tetsuya

  Materials Science Research Laboratory, Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan

• Tanaka Atsushi

  Power Engineering R&D Center, The Kansai Electric Power Co., Inc., Amagasaki, Hyogo 661-0974, Japan

関連論文

• Drift Phenomena of Forward and Reverse Recovery Characteristics in {0001} 4H-SiC p--i--n Diode
• X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC
• Conductivity Degradation of 4H-SiC p--i--n Diode with In-Grown Stacking Faults

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