X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-06-25
著者
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Kamata Isaho
Materials Science Research Laboratory Central Research Institute Of Electric Power Industry (criepi)
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Mori Daisuke
Applied Physics Research Department Advanced Technology Laboratory Fuji Electric Co. Ltd.
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TANUMA Ryohei
Materials Science Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI)
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TSUCHIDA Hidekazu
Materials Science Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI)
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Tanuma Ryohei
Materials Science Research Laboratory Central Research Institute Of Electric Power Industry (criepi)
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Tsuchida Hidekazu
Materials Science Research Laboratory Central Research Institute Of Electric Power Industry (criepi)
関連論文
- Drift Phenomena of Forward and Reverse Recovery Characteristics in {0001} 4H-SiC p--i--n Diode
- X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC
- X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC
- Conductivity Degradation of 4H-SiC p--i--n Diode with In-Grown Stacking Faults