Experimental and Modeling Study of Optically Triggered SiC 1000 V p--i--n Diode Switches
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概要
- 論文の詳細を見る
SiC photoconductive switches combine the advantages of both SiC power electronics for high power and high efficiency at high temperature, and optically controlled devices for fast switching, enhanced reliability, and electromagnetic interference (EMI) immunity. In this work, SiC optically triggered diode (OTD) was designed and fabricated. The diode successfully switched 1000 V when illuminated by a single laser pulse of 337.1 nm wavelength and 1.2 mJ optical energy. A physical device model was validated by test results, from which the on-state resistance and peak photocurrent under different bias voltages and optical energies were calculated, and the potential of these optical diodes was further explored.
- 2012-07-25
著者
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Islam Mohammad
Department Of Anatomy And Histology Faculty Of Veterinary Science Bangladesh Agricultural University
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Rahman Farid
Department Of Electrical Engineering University Of South Carolina
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Zhao Feng
School Of Engineering And Computer Science Washington State University
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Huang Chih-fang
Institute Of Electronics Engineering National Tsing Hua University
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Islam Mohammad
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Zhao Feng
School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, U.S.A.
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Huang Chih-Fang
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Rahman Farid
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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