Preparation of MAX-Phase-Containing Ti--Si--C Thin Films by Magnetron Sputtering Using Elemental Targets

概要

論文の詳細を見る
The synthesis of Ti--Si--C thin films by magnetron sputtering was examined using elemental targets of titanium, silicon, and carbon in order to investigate the effects of the carbon content in the films on the formation of carbide compounds such as TiCx and/or Ti3SiC2. The thin films were deposited on silicon substrates heated to approximately 800 °C in an atmosphere of argon. By performing X-ray diffractometry (XRD) measurements, it was found that a Ti3SiC2 phase as well as a TiCx phase were formed in the film obtained at a DC electric power of 200 W, while only a TiCx phase formed at a DC electric power of 300 W and above. The electrical resistivity of the films decreased with decreasing electric power supplied to the carbon target, which was attributed to the formation of the Ti3SiC2 phase in the film. A noteworthy electric resistivity of less than 80 μ\Omega cm was achieved.
2012-01-25