Thermal Stability of SiBCN Films
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概要
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Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-C (Si plate and B4C target) target was used for the film deposition. The composition and chemical bonding structure of the prepared films were investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. Si-N bonds increased with increasing silicon content. Surface roughness of SiBCN films decreased with increasing Si content. Hardness of SiBCN films exhibited up to 22 GPa with increasing silicon content. SiBCN films showed no changes in chemical bonds after heating at 600 ºC. Even after heating at 700 ºC, SiBCN films maintained relatively high hardness, whereas hardness of SiBCN films was quietly reduced after heating at 800 ºC. Thermal stability of SiBCN films was improved with increasing Si content.
著者
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Kawaguchi Masahiro
Advanced Material Processing Group, Tokyo Metropolitan Industrial Technology Research Institute
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NAKAO Setsuo
National Industrial Research Institute of Nagoya
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Kato Takahisa
Department Of Mechanical Engineering Faculty Of Engineering The University Of Tokyo
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Choi Junho
Department Of Computer And Radio Communications Engineering Korea University
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Kumagai Tomohisa
Department Of Mechanical Engineering The University Of Tokyo
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Nakao Setsuo
National Institute of Advanced Industrial Science and Technology (AIST)
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Ikeyama Masami
National Institute of Advanced Industrial Science and Technology (AIST)
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Hayashi Naohiro
Department of Mechanical Engineering, The University of Tokyo
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