Mobility Improvement in C60-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes
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概要
- 論文の詳細を見る
Fullerene (C60)-based organic field-effect transistors (OFETs) were fabricated using lithium fluoride (LiF)/silver (Ag) as source/drain electrodes. Field-effect mobility increased from 2.74 to 5.07 cm2 V-1 s-1 after modifying single Ag electrodes with the proper thickness of LiF layer. Meanwhile, the contact resistance could be reduced from 25 to 10 k\Omega. The performance improvement of the OFETs was attributed to the realignment of the energy band, which could reduce the charge carrier injection barrier at the C60/Ag interface. Moreover, the electronic tunneling enhancement was also analyzed in detail to discuss the effect of the LiF layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-12-25
著者
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Yu Junsheng
State Key Laboratory And Institute Of Coordination Chemistry Department Of Chemistry Nanjing Univers
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Jiang Yadong
State Key Lab Of Electronic Thin Films And Integrated Devices University Of Electronic Science And T
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Zhou Jianlin
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Zhou Jianlin
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
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Yu Junsheng
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Yu Xinge
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
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Cai Xinyang
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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