Improvement of the Band Profile of Cu(In,Ga)Se2 Solar Cells with High-Ga Content Prepared Using a Five-Stage Method
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概要
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The efficiency of Cu(InGa)Se2 (CIGS) solar cells with high Ga content fabricated by the three-stage method is lower than that with low Ga content in spite of a better matching solar spectrum. Secondary ion mass spectrometry (SIMS) measurement revealed that the band profile of CIGS films with high Ga content had a deep notch around 0.5 μm from the CdS/CIGS interface. In order to decrease the notch depth of the CIGS with high Ga content, the five-stage method was employed instead of the conventional three-stage method. As a result, we successfully obtained the efficiency of 14.9% using the CIGS absorber with an average band gap of 1.40 eV prepared by the five-stage method. Theoretical simulation revealed the effects of the notch location and depth on solar cell performance characteristics.
- 2012-10-25
著者
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Kurokawa Yasuyoshi
Department Of Physical Electronics Tokyo Institute Of Technology
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Hirai Yoshiaki
Department Of Biochemical Engineering And Science College Of Computer Science And Systems Engineerin
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Hirai Yoshiaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Hidaka Yukiya
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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