Metal-Assisted Chemical Etching Using Silica Nanoparticle for the Fabrication of a Silicon Nanowire Array
スポンサーリンク
概要
- 論文の詳細を見る
30-nm-diameter silica nanoparticles with a carboxyl radical (COO-) were successfully dispersed on an amino-treated silicon wafer at about 20 nm intervals owing to the repulsion among nanoparticles with negative charges. The dispersed silica nanoparticles were used as the mask for the preparation of silicon nanowire (SiNW) arrays by metal-assisted chemical etching (MAE). The diameter of the prepared SiNWs was approximately 30 nm from their transmission electron microscope image.
- 2012-02-25
著者
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Watanabe Yuya
Department Of Oral Pathology Osaka Dental University
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KATO Shinya
Department of Cardiology, Mie University Graduate School of Medicine
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Kurokawa Yasuyoshi
Department Of Physical Electronics Tokyo Institute Of Technology
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Hirota Masaki
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan
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Ohta Yoshimi
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan
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Watanabe Yuya
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Niwa Yusuke
Advanced Materials Laboratory, Nissan Research Center, Yokosuka, Kanagawa 237-8523, Japan
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KATO Shinya
Department of Anesthesiology and the Intensive Care Unit, Teikyo University School of Medicine
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Kato Shinya
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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