Thermal Transient Response and Its Modeling for Joule Heating in Cu/Low-κ Interconnects Under Pulsed Current (Special Issue : Advanced Metallization for ULSI Applications)

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概要

• 論文の詳細を見る

• We propose a thermal transient response due to Joule heating and its modeling in Cu/low-\kappa interconnects. By incorporating a shape parameter on the model, the observed thermal response is more accurately represented compared to the conventional exponential function model. The effective thermal time constant in multilayered Cu/low-\kappa interconnects is experimentally investigated on the basis of the transient thermal response.

• 2012-05-25

著者

• Yokogawa Shinji

  Device & Analysis Technology Division, Renesas Electronics Corporation, Sagamihara 229-1198, Japan

• Tsuchiya Hideaki

  Device & Analysis Technology Division, Renesas Electronics Corporation, Sagamihara 229-1198, Japan

• Shimizu Tatsuo

  Device & Analysis Technology Division, Renesas Electronics Corporation, Sagamihara 229-1198, Japan

• Shimizu Tatsuo

  Device & Analysis Technology Division, Renesas Electronics Corporation, Sagamihara 229-1198, Japan

関連論文

• Role of Impurity Segregation into Cu/Cap Interface and Grain Boundary in Resistivity and Electromigration of Cu/Low-$k$ Interconnects
• Thermal Transient Response and Its Modeling for Joule Heating in Cu/Low-κ Interconnects Under Pulsed Current (Special Issue : Advanced Metallization for ULSI Applications)

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