Interfacial Adhesion Energy of Ru--AlO Thin Film Deposited by Atomic Layer Deposition between Cu and SiO2: Effect of the Composition of Ru--AlO Thin Film
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概要
- 論文の詳細を見る
The effect of the composition of Ru--AlO thin films on the interfacial adhesion energy of an Ru--AlO thin film deposited by atomic layer deposition (ALD) between Cu and SiO2, which is a potential candidate for a Cu direct-plateable diffusion barrier, was evaluated using a four-point bending test. The interfacial adhesion energy increased with increasing AlOx content in the Ru--AlO thin films. The results were quantitatively correlated with the interfacial chemical bonding characteristics analyzed by X-ray photoemission spectroscopy, which showed that the adhesion energy is closely related to the formation of strong Al--O--Si bonds at film/substrate interfaces.
- 2012-05-25
著者
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Park Young-Bae
School of Material Science and Engineering, Andong National University, Andong 760-749, Korea
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Kim Jeong-Kyu
School of Materials Science and Engineering, Andong National University, Andong, Gyeongbuk 760-749, Korea
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Kim Soo-Hyun
School of Materials Science and Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea
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Cheon Tae-Hoon
School of Materials Science and Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea
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