Nanograting Fabrication on the Surface of Silicon and Gallium Arsenide Using Femtosecond Laser Pulses

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概要

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• Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800 nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-06-25

著者

• Kim Dae-jin

  Department Of Electronics Engineering Chonnam National Univ.

• Lee Myeongkyu

  Department Of Materials Science And Engineering Yonsei University

• Kim Tae-hong

  Department Of Ceramic Engineering Yonsei University

• Kim Tae-hong

  Department of Physics, Chungbuk National University, Cheongju 361-763, Korea

• Sohn Ik-Bu

  Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Jang Woo-young

  Department of Physics, Chungbuk National University, Cheongju 361-763, Korea

• Lim Ki-Soo

  Department of Physics, Chungbuk National University, Cheongju 361-763, Korea

• Kim Dae-jin

  Department of Physics, Chungbuk National University, Cheongju 361-763, Korea

• KIM Dae-Jin

  Department of EECS, KAIST

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• Nanograting Fabrication on the Surface of Silicon and Gallium Arsenide Using Femtosecond Laser Pulses

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