Delocalization of the f Electron in CexLa1-xRu2Si2
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概要
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We have preformed the de Haas–van Alphen effect measurements in CexLa1-xRu2Si2 with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with $x$ is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.
- Physical Society of Japanの論文
- 2010-08-15
著者
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KIMURA Noriaki
Graduate School of Science and Center for Low Temperature Science, Tohoku University
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AOKI Haruyoshi
Graduate School of Science and Center for Low Temperature Science, Tohoku University
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Taichi Terashima
National Institute For Materials Science
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Matsumoto Yuji
Graduate School Of Agricultural And Life Sciences The University Of Tokyo
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Hiroshi Yamagami
Japan Atomic Energy Agency, Synchrotron Radiation Research Center SPring-8, Sayo, Hyogo 679-5148, Japan
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Motoi Kimata
National Institute for Materials Research, Tsukuba, Ibaraki 305-0047, Japan
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Shinya Uji
National Institute for Materials Research, Tsukuba, Ibaraki 305-0047, Japan
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Tetsuo Okane
Japan Atomic Energy Agency, Synchrotron Radiation Research Center SPring-8, Sayo, Hyogo 679-5148, Japan
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Yuji Matsumoto
Graduate School of Science and Center for Low Temperature Science, Tohoku University, Sendai 980-8578, Japan
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Noriaki Kimura
Graduate School of Science and Center for Low Temperature Science, Tohoku University, Sendai 980-8578, Japan
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Taichi Terashima
National Institute for Materials Research, Tsukuba, Ibaraki 305-0047, Japan
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