Surface-Site-Selective Study of Valence Electronic Structures of Clean Si(100)-$2{\times}1$ Using Si-L23VV Auger Electron–Si-2p Photoelectron Coincidence Spectroscopy

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概要

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• Valence electronic structures of a clean Si(100)-$2{\times}1$ surface are investigated in a surface-site-selective way using Si-L23VV Auger electron–Si-2p photoelectron coincidence spectroscopy. The Si-L23VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-$2{\times}1$ suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms.

• Physical Society of Japanの論文
• 2010-06-15

著者

• Kakiuchi Takuhiro

  Department Of Chemistry Faculty Of Science Ehime University

• Kazuhiko Mase

  Institute of Materials Structure Science, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan

• Hashimoto Shogo

  Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

• Fujita Narihiko

  Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

• Masatoshi Tanaka

  Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

• Shin-ichi Nagaoka

  Department of Chemistry, Faculty of Science, Ehime University, 2-5 Bunkyocho, Matsuyama 790-8577, Japan

• Shogo Hashimoto

  Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

• Narihiko Fujita

  Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

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• Surface-Site-Selective Study of Valence Electronic Structures of Clean Si(100)-$2{\times}1$ Using Si-L23VV Auger Electron–Si-2p Photoelectron Coincidence Spectroscopy

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