Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes
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概要
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A carbon nanotube field-effect transistor (CNT-FET) is a promising candidate for future electronic devices; however, its fabrication process is still challenging. We propose a simple fabrication technique for CNT-FET arrays using as-grown single-walled CNTs (SWNTs) as the gate channel. In this study, a hydrophobic self-assembled monolayer (SAM) was used to restrict the catalyst-supporting area after the fabrication of an electrode array. Since it is known that droplets are trapped at rough edges of a hydrophobic surface, the deposition of a liquid-based catalyst, followed by alcohol catalytic chemical vapor deposition (ACCVD) produced SWNTs that grew only at the corners of electrode edges. The current--voltage ($I$--$V$) characterization of FETs with a 40 μm channel width showed that 98% of the fabricated devices were electrically connected and more than 50% were functional FETs ($I_{\text{ON}}/I_{\text{OFF}} > 10^{2}$).
- 2011-04-25
著者
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Einarsson Erik
Department Of Mechanical Engineering The University Of Tokyo
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Shiomi Junichiro
Department Of Mechanical Engineering School Of Engineering The University Of Tokyo
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Aikawa Shinya
Department Of Electrical Engineering Tokyo University Of Science
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Maruyama Shigeo
Department Of Internal Medicine Gotsu General Hospital
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Chiashi Shohei
Department Of Mechanical Engineering The University Of Tokyo
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Nishikawa Eiichi
Department Of Electrical Engineering Science University Of Tokyo
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Xiang Rong
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
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Chiashi Shohei
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Einarsson Erik
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Aikawa Shinya
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Maruyama Shigeo
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Inoue Taiki
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Nishikawa Eiichi
Department of Electrical Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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