Patterned Growth of High-Quality Single-Walled Carbon Nanotubes from Dip-Coated Catalyst
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概要
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Here, we show that the conventional concept of using SiO2-patterned Si substrates to selectively grow three-dimensional (3D) carbon nanotube structures can also be applied to dip coating. Patterned growth of high-quality vertically aligned single-walled carbon nanotubes (SWNTs) can be easily obtained by this protocol. Apart from the sintering of catalyst into Si at high temperatures, the difference in surface wettability between Si and SiO2 also plays an important role in this selective growth, which we utilize in a novel method of patterning SWNT growth on chemically modified surfaces.
- 2010-02-25
著者
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Einarsson Erik
Department Of Mechanical Engineering The University Of Tokyo
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Rong Xiang
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Xiang Rong
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Okabe Hiroto
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Shohei Chiashi
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Junichiro Shiomi
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Shigeo Maruyama
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Hiroto Okabe
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Erik Einarsson
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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