Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films

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概要

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• We have investigated current conduction in silicon nitride films subjected to 4.9 eV ultraviolet (UV) illumination at room temperature. By exposure of silicon nitride single-layer and silicon nitride--silicon dioxide double-layer films to UV illumination, paramagnetic defects were generated in the nitride layers in both films, which were identified to be neutrally charged silicon dangling bonds (K0 centers). UV illumination also induced a substantial increase in conduction current in both films. The increase in current was clearly dependent on the density of the UV-induced paramagnetic defects. We discuss the mechanism of the UV-induced current increase and suggest that the generation of paramagnetic defects is likely responsible for the current increase.

• 2011-03-25

著者

• Kobayashi Kiyoteru

  Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

関連論文

• Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films
• Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers
• Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

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