Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers

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概要

• 論文の詳細を見る

• The current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through both films substantially increased under positive and negative gate biases. The current increased as a function of the change in paramagnetic defect density, which was obtained from electron spin resonance signals of the SiCN and SiCN–SiO2 films subjected to 4.9-eV UV illumination. We suggest that the paramagnetic defects, which have been identified as neutrally charged silicon dangling bonds, act as generation centers and that their formation is responsible for the current increase. The conduction mechanisms of the photoinduced leakage current are discussed in detail.

• 2010-05-25

著者

• Kiyoteru Kobayashi

  Graduate School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

• Kobayashi Kiyoteru

  Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

• Ide Taketoshi

  Graduate School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

• Taketoshi Ide

  Graduate School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan

関連論文

• Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films
• Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers
• Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

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