Zn2LiGaO4, Wurtzite-Derived Wide Band Gap Oxide

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概要

• 論文の詳細を見る

• The phase that appeared in the pseudo-binary LiGaO2--ZnO system was investigated by powder X-ray diffraction (XRD), selected area electron diffraction by transmission electron microscopy (TEM-SAD) and Raman spectroscopy, especially focusing on the 0.5(LiGaO2)1/2$\Cdot$0.5ZnO composition. A new quaternary wurtzite-derived Zn2LiGaO4 phase was found in this system. The TEM-SAD indicated that the phase possesses an incommensurately modulated ordering. The optical energy band gap of Zn2LiGaO4 was determined to be ${\sim}4.0$ eV from its diffuse reflectance and photoluminescence spectra; and it was suggested that the Zn2LiGaO4 was a direct semiconductor.

• 2011-03-25

著者

• Kita Masao

  Department of Ecomaterials Engineering, Toyama National College of Technology, Toyama 939-8630, Japan

• Omata Takahisa

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Otsuka-Yao-Matsuo Shinya

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Nose Katsuhiro

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Tachibana Kosuke

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

関連論文

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• Zn2LiGaO4, Wurtzite-Derived Wide Band Gap Oxide
• Fabrication of ZnO Films Alloyed with LiGaO2 by RF-Magnetron Sputtering and Their Optical Property
• Impact of the Electrical Forming Process on the Resistance Switching Behaviors in Lanthanum-Doped Strontium Titanate Ceramic Chip Devices

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