Impact of the Electrical Forming Process on the Resistance Switching Behaviors in Lanthanum-Doped Strontium Titanate Ceramic Chip Devices
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概要
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The resistance switching (RS) behaviors of La-doped SrTiO<inf>3</inf>ceramics before and after the electrical forming process (E-forming) have been investigated in order to clarify the RS mechanism. The formation processes for the double Schottky barriers (DSBs), such as reoxidation and E-forming, are important to realize stable RS properties, and Joule heating strongly influences the RS behaviors after the E-forming. Thermally stimulated current measurements clearly indicated the contribution of defects related to oxygen vacancies to the current conduction through DSBs and RS phenomena both before and after the E-forming. Experimental results suggest that the electron trapping in the defects and/or the defect migration induced by the voltage application and Joule heating change the space-charge distribution near the grain boundaries, resulting in the change in the resistance state.
- 2013-04-25
著者
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Ieki Hideharu
Murata Manufacturing Co. Ltd.
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Ando Akira
Murata Manufacturing Co. Ltd.
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Niimi Hideaki
Murata Manufacturing Co., Ltd., 10-1 Higashi Kotari 1-chome, Nagaokakyo, Kyoto 617-8555, Japan
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Kageyama Keisuke
Murata Manufacturing Co., Ltd., 1-10-1 Higashikotari, Nagaokakyo, Kyoto 617-8555, Japan
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Omata Takahisa
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hirose Sakyo
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan
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