Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution

概要

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Zinc oxide (ZnO) thin-film transistors (TFTs) were fabricated by thermal chemical vapor deposition (CVD) using aqueous solutions of zinc acetate (ZnAc2) dihydrate as a source. The precursor was supplied to the substrate by the nitrogen bubbling method through a plate with numerous orifices in the ZnAc2 solution. The ZnO thin films were grown on silicon substrates in the growth temperature ($T_{\text{G}}$) range from 280 to 700 °C. The growth rate of ZnO thin films were linearly proportional to the growth temperature, which suggested that the growth rate is limited by the decomposition of ZnAc2. Depletion-mode TFTs with the ZnO film grown at $T_{\text{G}} = 350$ °C was found to exhibit a relatively low saturation mobility ($\mu_{\text{sat}}$). However, $\mu_{\text{sat}}$ increased from 1 to 14 cm2$\cdot$V-1$\cdot$s-1 and the operational mode was changed from the depletion mode to the enhancement mode by annealing treatment at 200 °C for 2 h under N2 ambient.
2011-01-25