Molecular Orientation of Poly(3-hexylthiophene)/Fullerene Composite Thin Films

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概要

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• Focused on the relationship between the molecular orientation and the electrical performance of poly(3-hexylthiophene)/[6,6]-phenyl C61-butyric acid methyl ester (P3HT/PCBM) composite thin films to elucidate the effect of changing amount of PCBM in P3HT:PCBM by weight ratio in organic solution has been studies. The P3HT/PCBM composite thin films were investigated by an electron spin resonance (ESR) and X-ray diffraction (XRD) to reveal the film molecular and structure orientation. It was observed that the composite films with a small amount of PCBM were capable of altering the molecular structure of P3HT. It was also observed that the presence of a small amount of PCBM molecules improved the device performance of P3HT thin film transistors (TFTs), which provide the mobility on the order of $10^{-3}$ cm2 V-1 s-1 with an on/off current ratio of $10^{-4}$. The threshold voltage was also higher than of pure P3HT TFTs.

• 2010-04-25

著者

• Katsuhiro Uesugi

  Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

• Uesugi Katsuhiro

  Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

• Mohamad Khairul

  Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

• Hisashi Fukuda

  Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

• Komatsu Natsuki

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

• Khairul Anuar

  Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

• Natsuki Komatsu

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan

関連論文

• Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution
• Bias-Induced Threshold Voltage Shifts in Organic Thin-Film Transistors by Soluble Fullerene Layers on Gate Dielectric
• Temperature Dependence of CuGaO Films Fabricated by Sol-Gel Method
• Molecular Orientation of Poly(3-hexylthiophene)/Fullerene Composite Thin Films
• Poly(3-hexylthiophene)/Fullerene Organic Thin-Film Transistors: Investigation of Photoresponse and Memory Effects

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