Parametric Study for Selective Growth of Single-Walled Carbon Nanotubes in Plasma Enhanced Chemical Vapor Deposition
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概要
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Carbon nanotube (CNT) growth mechanism in plasma enhanced chemical vapor deposition (PECVD) is presented. Previously developed atmospheric pressure glow discharge reactor was modified and used for this purpose. First, pressure-dependent transition (20--100 kPa) of CNT morphology was investigated with fixed input power (60 W) and different catalyst loading (Fe/Al2Ox: 20 nm). High-purity, vertically-aligned single-walled CNTs (SWCNTs) were synthesized when capacitively coupled non-thermal plasma was generated at atmospheric pressure. On the other hand, fraction of double-walled and multi-walled CNTs increased as total pressure decreased. Although CNT growth rate was decelerated at reduced input power (5--20 W), SWCNTs were also synthesized in the root growth regime at 20 kPa. Plasma-generated reactive species are the important driving force of CNT growth; however, generation and transportation of those species must be properly suppressed for selective growth of single-, double-, and multi-walled CNTs.
- 2011-01-25
著者
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Nozaki Tomohiro
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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Okazaki Ken
Department Of Energy Engineering Toyohashi University Of Technology
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Karatsu Takuya
Department of Mechanical and Control Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Yoshida Shinpei
Department of Mechanical and Control Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okazaki Ken
Department of Mechanical and Control Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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