Formation Mechanism of Silicon Oxide Films with High Quality of Step Coverage by Remote Plasma CVD Using Tetraethylorthosilicate
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概要
- 論文の詳細を見る
- 1999-11-01
著者
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Okazaki K
Department Of Mechanical Engineering And Science Tokyo Institute Of Technology
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Okazaki Ken
Department Of Energy Engineering Toyohashi University Of Technology
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ISHIMARU Kazuhiro
Department of Mechanical Engineering, Gifu National College of Technology
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Ishimaru Kazuhiro
Department Of Mechanical Engineering Gifu National College Of Technology
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