Fabrication of Nanochannels with High Aspect Ratios on a Silicon Substrate by Local Focused Ion Beam Implantation and Deep Reactive Ion Etching

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概要

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• Recently, demands for nanochannels have been increasing in biological and nanofluidic applications. In this paper, a fabrication process that produces a nanochannel with a width of less than 20 nm and a high aspect ratio is proposed. For the versatility of channel pattern design, focused ion beam (FIB) direct writing is applied for mask fabrication. A metal mask pattern is fabricated using localized ion implantation method and is used for a deep reactive ion etching (DRIE) process. A process condition for minimum undercut in the DRIE process is determined. The proposed method is applied to the fabrication of nanochannels with various dimension and patterns.

• 2010-06-25

著者

• Han Jin

  School Of Mechanical Engineering Yonsei University

• Min Byung-kwon

  School Of Mechanical Engineering Yonsei University

• Kim Tae-gon

  School Of Materials Science And Engineering Seoul National University

• Byung-Kwon Min

  School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea

• Sang Jo

  School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea

• Sang Jo

  School of Mechanical Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea

• Jin Han

  School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea

• Tae-Gon Kim

  School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea

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• Fabrication of Nanochannels with High Aspect Ratios on a Silicon Substrate by Local Focused Ion Beam Implantation and Deep Reactive Ion Etching
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