Transmission Electron Beam Drilling for Nanoscale Fabrication
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概要
- 論文の詳細を見る
We demonstrated that a high-resolution focused electron beam can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. This top-down focused electron beam drilling method works by the controlled ablation of materias to produce nanoscale devices with near-atomic the precision. In addition, we have fabricated a single-electron transistor (SET) on free-standing transparent Si3N4 membranes, which permits enables us to explore quantum tunneling effects in narrow-constriction structures. The produced SET exhibited distinct Coulomb-blockade current–voltage characteristics and gate-modulated current at 4.2 K. Its high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and quantum devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-06-25
著者
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Lai Yu-cheng
Department Of Chemistry And Center For Nano Technology Chung Yuan Christian University
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Dau-Chung Wang
Department of Mechanical Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan
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Lin Tsan-Chu
Graduate School of Engineering Science and Technology, Doctoral Program, National Yunlin University of Science and Technology, Yunlin 640, Taiwan
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Su Rui-Zhi
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
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Cen-Shawn Wu
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
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Rui-Zhi Su
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
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Tsan-Chu Lin
Graduate School of Engineering Science and Technology, Doctoral Program, National Yunlin University of Science and Technology, Yunlin 640, Taiwan
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Yu-cheng Lai
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
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- Transmission Electron Beam Drilling for Nanoscale Fabrication