Temperature Limitations of Quantum Hall Far-Infrared Photodetectors

概要

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We have investigated the temperature, $T$, dependence of a highly sensitive far-infrared (FIR) photodetector fabricated on a two-dimensional electron gas system in GaAs/AlGaAs heterostructures. The photoinduced resistance change, $\Delta R_{xx}$, observed in different integer quantum Hall (QH) regimes shows different $T$ dependences. At high $T$, $\Delta R_{xx}$ is limited by the vanishing of rising electronic temperature $\Delta T_{\text{e}}$. For $T < 5$ K, $\Delta R_{xx}$ can either rapidly increase with lower $T$ or slowly diminish, determined by the interplay between the magnetic field dependence of $\Delta T_{\text{e}}$ and the $T$ dependence of QH states.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-03-25