Efficiency Improvement of Silicon Solar Cells by Nitric Acid Oxidization

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概要

• 論文の詳細を見る

• In this study, we investigate the effect of nitric acid oxidation on p-type silicon solar cells. The oxide layer on the surface of a p-type silicon substrate was grown under various growth times and temperatures while under nitric acid treatment. After 30 min of growth at 23 °C, an efficiency improvement of absolute 2% was obtained using our laboratory fabrication process.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-02-25

著者

• Yeng-Cheng Hu

  Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

• Wang Likarn

  Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

• Likarn Wang

  Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

• Hu Yeng-Cheng

  Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

• Chiu Ming-Hui

  Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

• Jing-Long Tsai

  No 22, Aly 1, Ln 67, Min-Tsu Rd, Hsinchu, Taiwan, R.O.C.

• Ming-Hui Chiu

  Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

関連論文

• Photonic Crystal Based Optical Add/Drop Multiplexer Using Narrow-Band Reflection Filters
• Wavelength Switching of Erbium-Doped Fiber Laser by Optical Injection into Overlapped Laser Cavities
• Efficiency Improvement of Silicon Solar Cells by Nitric Acid Oxidization

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