Strain Dependence of Formation Mechanism of Growth Layer in Molecular Beam Epitaxy of Gallium Nitride
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概要
- 論文の詳細を見る
In this study, the epitaxial growth of gallium nitride (GaN) on a GaN substrate is investigated by a molecular dynamics (MD) method. Furthermore, the difference between the surface diffusion of atoms of a strained substrate and an unstrained substrate is examined. From the results of this examination, it is found that the diffusion characteristic in the unstrained case is higher than that in the strained case. Therefore, in the unstrained case, GaN grows layer-by-layer. On the other hand, in the strained case, multiple layers of GaN grow simultaneously. Furthermore, it is also found that the wurtzite structure of GaN differs between the strained case and the unstrained case.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-11-25
著者
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DOI Yusuke
Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University
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Nakatani Akihiro
Department Of Adaptive Machine Systems Graduate School Of Engineering Osaka University
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Kobayashi Yasunori
Department Of Materials Chemistry Graduate School Of Engineering Tohoku University
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Doi Yusuke
Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakatani Akihiro
Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kobayashi Yasunori
Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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