Thermoelectric Properties of Electron-Doped KTaO3
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概要
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To explore the possibility of large thermoelectric responses on the basis of d-electron orbital degeneracy, we investigated electrical and thermal transport properties of single crystals of electron-doped KTaO3. The electron-type carrier density ($n$) can be increased up to $1.4\times 10^{20}$ cm-3 ($x = 0.009$) by partially substituting K with Ba in the form of K1-xBaxTaO3. The power factor and dimensionless figure of merit at room temperature steeply increase with $n$, up to 14 μW cm-1 K-2 and 0.03 for $x = 0.009$, respectively. This suggests that K1-xBaxTaO3 is a potential thermoelectric material, provided that $n$ can be further increased.
- 2009-09-25
著者
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Tokura Yoshinori
Correlated Electron Research Center (cerc) Aist
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Adachi Hideaki
Advanced Technology Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Kanno Tsutomu
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Sakai Akihiro
Correlated Electron Research Center (cerc) National Institute Of Advanced Industrial Science And Tec
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Yotsuhashi Satoshi
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Sakai Akihiro
Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Yotsuhashi Satoshi
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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Kanno Tsutomu
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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