Colossal Electro-Resistance Memory Effect at Metal/La2CuO4 Interfaces
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概要
- 論文の詳細を見る
We have examined the colossal electro-resistance memory effect for the metal/La2CuO4 ($M$/LCO) junctions with $M$ = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current–voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr0.7Ca0.3MnO3 junctions, and can be attributed to the charging effect at the Schottky-like interface.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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KAWASAKI Masashi
Correlated Electron Research Center (CERC), AIST
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Tokura Yoshinori
Correlated Electron Research Center (cerc) Aist
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Sawa Akihito
Correlated Electron Research Center (cerc)
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Sawa Akihito
Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Fujii Takeshi
Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Kawasaki Masashi
Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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