Simplified Surface Reaction Model of SF6/CHF3 Plasma Etching of SiN Film

概要

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In constructing a surface reaction model of plasma etching, there are many coefficients that must be determined, because there are various species of radical which contribute to surface reactions. In this study, the conventional surface reaction model has been simplified to reduce the number of coefficients. This simplified model was in good agreement with experimental data with a fitting error of $\pm 0.026$ nm/s. Furthermore, each term in our model indicates a physically meaningful trend, which shows that our simplification is appropriate for explaining experimental results. The distribution of etching rate was also analyzed using our model to separate ion-enhance and pure-chemical-etching factors across the wafer using only a plasma etching apparatus and a tool for measuring film thickness.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-08-25