Nara Yasuo | Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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概要
- Nara Yasuoの詳細を見る
- 同名の論文著者
- Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japanの論文著者
関連著者
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Ohji Yuzuru
Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Iwakoshi Takehisa
Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Takayuki
Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nara Yasuo
Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ono Tetsuo
Front End Process Program, Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Joo Kazuhiro
Hitachi High-Technologies, Corporation, 794 Higashi-toyoi, Kudamatsu, Yamaguchi 744-0002, Japan
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Saito Go
Hitachi High-Technologies, Corporation, 794 Higashi-toyoi, Kudamatsu, Yamaguchi 744-0002, Japan
著作論文
- Simplified Surface Reaction Model of SF6/CHF3 Plasma Etching of SiN Film
- Real-Time Measurement of W, TiN, and TaSiN Thicknesses Comprising Full-Metal Gates during Plasma Etching by Optical Interference of Etching Plasma