1 Tbit/in.2 Very-High-Density Recording in Mass-Productive Polycrystalline Ferroelectric Thin Film Media
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概要
- 論文の詳細を見る
We demonstrate very-high-density ferroelectric recording experiments of 1 Tbit/in.2 in polycrystalline Pb(Zr,Ti)O3 (PZT) thin film for the first time. A high-quality polycrystalline PZT thin film was successfully deposited on a silicon substrate with a SrRuO3 (SRO) electrode by metal–organic chemical vapor deposition (MOCVD). The roughness of the PZT film was reduced to less than 1 nm by chemical mechanical polishing (CMP). The PZT film has very high controllability for domain inversion. Our fabrication process also enables high productivity. Therefore, our PZT film has potential to be a mass-productive ferroelectric recording medium for high-density storage systems.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-07-25
著者
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Toda Masayuki
Wacom R&d Corporation
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Onoe Atsushi
R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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Tamura Masahiro
AMAYA Corporation, 3149-1 Nishikata, Koshigaya, Saitama 343-0822, Japan
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Fujimoto Kenjiro
R&D Laboratories, Pioneer Corporation, 6-1-2 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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Kawano Takahiro
R&D Laboratories, Pioneer Corporation, 6-1-2 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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Umeda Masaru
WACOM R&D Corporation, 568 Tanaka, Fukaya, Saitama 369-1108, Japan
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Kawano Takahiro
R&D Laboratories, Pioneer Corporation, 6-1-2 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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Umeda Masaru
WACOM R&D Corporation, 568 Tanaka, Fukaya, Saitama 369-1108, Japan
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