Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm
スポンサーリンク
概要
- 論文の詳細を見る
InAs quantum dot (QD) formation on InP(001) has been investigated by gas source molecular beam epitaxy as a function of the substrate misorientation, arsenic pressure and temperature. A large improvement on quantum dot shape and density was obtained thanks to the use of substrates misoriented toward the [$1\bar{1}0$] direction and low arsine flow rate. Round-shaped small QDs (diameter: 26 nm) in high density ($9\times 10^{10}$ QDs/cm2) have been achieved using optimized growth conditions. Room temperature laser emission around 1.55 μm from was obtained with a threshold current density of 1 kA/cm2 for 1 mm long cavity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-07-25
著者
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Elias Georges
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Alghoraibi Ibrahim
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Corre Alain
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Tavernier Karine
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Piron Rozenn
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Loualiche Slimane
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Letoublon Antoine
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Nakkar Abdulhadi
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Chevalier Nicolas
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Bertru Nicolas
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Bertru Nicolas
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Nakkar Abdulhadi
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Chevalier Nicolas
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Tavernier Karine
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
関連論文
- Demonstration of a Low Threshold Current in 1.54 μm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks
- Achievement of InSb Quantum Dots on InP(100) Substrates
- Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm