Demonstration of a Low Threshold Current in 1.54 μm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks
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概要
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This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to $10^{11}$ cm-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 μm at room temperature associated with a threshold current density as low as 170 A/cm2. Experimental results also demonstrate a modal gain greater than 8 cm-1 per QD plane.
- 2007-10-15
著者
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Dehaese Olivier
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Le Corre
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Homeyer Estelle
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Piron Rozenn
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Grillot Frederic
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Tavernier Karine
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Macé Erwan
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Even Jacky
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Loualiche Slimane
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Even Jacky
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Piron Rozenn
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Loualiche Slimane
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Tavernier Karine
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
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Homeyer Estelle
FOTON-LENS, UMR CNRS C6082, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, F34043 Rennes Cedex, France
関連論文
- Demonstration of a Low Threshold Current in 1.54 μm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks
- Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm