Radiative Recombination Lifetime and Exciton Dimension in Zinc Blende AlxGa1-xN/AlN Quantum Boxes

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概要

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• In this work, to study the carrier dynamics and exciton dimensionality of the quantum confinement in zinc blende AlxGa1-xN/AlN quantum boxes, oscillator strength and radiative recombination lifetime were theoretically calculated. In smaller quantum boxes, the feature of a transition region between zero dimension (0-D) and quasi-three dimension (3-D) at high temperatures implies that the strong quantum confinement effect leads to better carrier localization. Owing to the enhanced quantum confinement effect of light-hole eigenstates, transitions from electron to light-hole eigenstates were found to be more efficient than those from electron to heavy-hole eigenstates. In addition, because the effective masses of III–N semiconductors are higher than those of conventional III–V semiconductors, the stronger quantum confinement effect in smaller quantum boxes leads to larger band transition energy, shorter radiative lifetime, and better recombination efficiency. III–N semiconductors can be used to take advantage of the strong quantum confinement effect to develop low-dimensional nanostructures in optoelectronic devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-05-25

著者

• Feng Shih-Wei

  Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist. Kaohsiung 811, Taiwan, R.O.C.

• Feng Shih-Wei

  Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan, R.O.C.

関連論文

• Ultrafast Exciton Dynamics in a ZnO Thin Film
• Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
• Radiative Recombination Lifetime and Exciton Dimension in Zinc Blende AlxGa1-xN/AlN Quantum Boxes

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