Cost-Effective Anodization Technique for Fabricating Ion-Sensitive Field-Effect Transistor Device Sensitive Membrane

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概要

• 論文の詳細を見る

• We report a cost-effective anodization technique for preparing ultrathin hafnium oxide at room temperature. The proposed method has been successfully applied as a H+ sensitive membrane that exhibits linear pH sensitivity of approximately 58 mV/pH ranging from pH 1 to 13. To realize the hafnium oxide electrical characteristics, metal insulator semiconductor structures were fabricated and measured using high frequency capacitance–voltage and current–voltage measurements. X-ray photoelectron spectroscopy and atomic force microscopy were used to characterize the structural changes. Besides, the time-drift measurement also been examined and discussed. It is concluded that the proposed room-temperature anodization optimization process for preparing sensitive membrane decreases the thermal budget as well as enhances the sensitivity and reliability.

• 2009-04-25

著者

• CHOU Jung-Chuan

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology

• Chen Chun-Yuan

  Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

• Chou Hsueh-Tao

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

• Chou Jung-Chuan

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

関連論文

• Study on Light and Temperature Properties of AIN pH-Ion-Sensitive Field-Effect Transistor Devices
• Cost-Effective Anodization Technique for Fabricating Ion-Sensitive Field-Effect Transistor Device Sensitive Membrane
• Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices
• Modeling of Drift and Hysteretic Sensing Phenomena of the Ba0.7Sr0.3TiO3 pH-Ion-Sensitive Field-Effect Transistor
• Study on Light and Temperature Properties of AlN pH-Ion-Sensitive Field-Effect Transistor Devices
• pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass

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