Modeling of Drift and Hysteretic Sensing Phenomena of the Ba0.7Sr0.3TiO3 pH-Ion-Sensitive Field-Effect Transistor

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概要

• 論文の詳細を見る

• The drift and hysteretic behaviors of sensitive films are of significant interest because of their importance for stability. In this study, a simple method based on the electrochemical permeation method was used to simulate the drift phenomena of the novel ultra-thin film for the H+-sensing behavior of barium strontium titanate (BST). Owing to hydrogen ion infusion into the sensitive film surface to form a hydrated layer, this film exhibits superior agreement between the experimental and simulated curves when the hydrogen ion diffusion coefficient is $1\times 10^{19}$ cm2/s the time dependence of the chemical response was also investigated by adopting a three time constant models to obtain the amplitude and time constant. The hysteretic loop effects are presented on the basis of different loop times. The hysteretic quantity was observed to increase with increasing loop time.

• 2008-11-25

著者

• CHOU Jung-Chuan

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology

• Chen Chun-Yuan

  Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

• Chou Hsueh-Tao

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

関連論文

• Study on Light and Temperature Properties of AIN pH-Ion-Sensitive Field-Effect Transistor Devices
• Cost-Effective Anodization Technique for Fabricating Ion-Sensitive Field-Effect Transistor Device Sensitive Membrane
• Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices
• Modeling of Drift and Hysteretic Sensing Phenomena of the Ba0.7Sr0.3TiO3 pH-Ion-Sensitive Field-Effect Transistor
• Study on Light and Temperature Properties of AlN pH-Ion-Sensitive Field-Effect Transistor Devices
• pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass

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