Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices

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概要

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• In this paper, we present a novel sensitive ion-sensitive field-effect transistor (ISFET) membrane based on Ba0.7Sr0.3TiO3 (BST)/SiO2 fabricated by sputtering deposition. The proposed device exhibits a linear shift in acidic solutions in the pH range from 1 to 10. The device sensitivity was about 50–55 mV/pH for different deposition times. We also examined the trapping behavior of the surface hydrated layer using the metal–insulator–semiconductor (MIS) structure. Results show that the hydration layer gives rise to stress polarity dependence of electron injection when immersed in pH buffer solutions. Injection from the gate electrode produces larger positive charges and interface state densities in contrast to the substrate injection, which causes simultaneous positive and negative charge trapping. A physical model that quantitatively describes the asymmetry associated with the hydrated diffusion layer is presented, and the temperature effects of BST/SiO2 ISFET devices in the range from 25 to 65 °C were examined. We observed that pH sensitivity increases with increasing temperature. The temperature coefficient of sensitivity (TCS) can be divided into two different ranges: 0.08 mV/pH °C between 25 and 45 °C, and 0.57 mV/pH °C between 45 and 65 °C. A better thermal stability is produced in the 25 and 45 °C range in comparison with other sensitive layers.

• 2009-04-25

著者

• CHOU Jung-Chuan

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology

• Chen Chun-Yuan

  Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

• Chou Hsueh-Tao

  Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 640, Taiwan, R.O.C.

関連論文

• Study on Light and Temperature Properties of AIN pH-Ion-Sensitive Field-Effect Transistor Devices
• Cost-Effective Anodization Technique for Fabricating Ion-Sensitive Field-Effect Transistor Device Sensitive Membrane
• Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices
• Modeling of Drift and Hysteretic Sensing Phenomena of the Ba0.7Sr0.3TiO3 pH-Ion-Sensitive Field-Effect Transistor
• Study on Light and Temperature Properties of AlN pH-Ion-Sensitive Field-Effect Transistor Devices
• pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass

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