Synthesis of Nickel Mono-Silicide Nanowire by Chemical Vapor Deposition on Nickel Film: Role of Surface Nickel Oxides
スポンサーリンク
概要
- 論文の詳細を見る
We synthesized nickel mono-silicide nanowires (NiSi-NWs) on electron-beam-evaporated Ni films with SiH4/H2 gases in a chemical-vapor-deposition chamber, and studied the growth mechanism of NiSi-NW by investigating various synthesis conditions. Results show that NiO and Ni2O3 phases coexist on nickel surface and agglomerate after heating and the initial growth of NiSi-NW is triggered by the Ni2O3. The effects of these surface nickel-oxides on NiSi-NW growth were investigated, and a synthesis model based-on vapor–liquid–solid mechanism with the aid of nickel diffusion to initiate NiSi-NW synthesis is proposed. It is also found that the diameter of NiSi-NW is mainly controlled by the synthesis temperature and the activation energy of NiSi-NW formation is estimated to be 1.72 eV.
- 2009-04-25
著者
-
Yang Wei-Feng
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
-
Lee Sung-Joo
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 117576
-
Whang Su-Jin
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
-
Sun Zhi-Qiang
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
-
Lee Sung-Joo
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
関連論文
- Synthesis of Nickel Mono-Silicide Nanowire by Chemical Vapor Deposition on Nickel Film: Role of Surface Nickel Oxides
- Pt–Germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistor Integrated with TaN/Chemical Vapor Deposition HfO2/Ge Gate Stack