High-Mobility Transparent SnO2 and ZnO–SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators

概要

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Using a double-layered gate insulator [SiO2 (100 nm)/Al2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO–SnO2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO2 TTFT was 17.4 cm2 s-1 V-1, and that of ZTO TTFT was 50.4 cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ${\sim}10^{6}$.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-04-25